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Si4354DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0165 at V GS = 10 V
0.0185 at V GS = 4.5 V
I D (A)
9.5
9.0
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Gen II Power MOSFET
? 100 % R g Tested
APPLICATIONS
? High-Side DC/DC Conversion
- Notebook
- Server
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
D
Top View
S
Ordering Information: Si4354DY-T1-E3 (Lead (Pb)-free)
Si4354DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
30
± 12
Unit
V
Continuous Drain Current (T J = 150 °C) b
Pulsed Drain Current
Continuous Source Current (Diode Conduction) b
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
9.5
7.5
40
2.2
2.5
1.6
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS a
Parameter
Maximum Junction-to-Ambient b
Maximum Junction-to-Foot (Drain)
Symbol
R thJA
R thJF
Typical
43
19
Maximum
50
25
Unit
°C/W
Notes:
a. t ≤ 10 s.
b. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72967
S09-0392-Rev. C, 09-Mar-09
www.vishay.com
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